Fabrication artifacts and parallel loss channels in metamorphic epitaxial aluminum superconducting resonators

Fabrication of coplanar waveguide resonators with internal quality factors near 10(6) remains challenging. Here, high-purity superconductors are implemented through metamorphic epitaxial aluminum that is grown via molecular beam epitaxy on silicon and sapphire substrates. X-ray diffraction and scanning transmission electron microscopy indicate an abrupt highly ordered interface that results in crystal relaxation within a few monolayers of the substrate interface and no measurable interfacial contamination. Quarter-wave coplanar waveguide resonators are fabricated using optical lithography and measured at temperatures below 100 mK. Post measurement characterization with charge contrast imaging in a scanning electron microscope identifies processing artifacts at the waveguide sidewalls, on the exposed substrate area and on the exposed aluminum surface. Of primary importance are processing induced corrosion defects on aluminum sidewalls, nanoparticle contamination, and photoresist residue that is difficult to remove without affecting the superconductor material. Likely correlations between these artifacts and the measured quality factor are discussed in context of device to device variations in resonator performance.