期刊
SOLID-STATE ELECTRONICS
卷 121, 期 -, 页码 20-24出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2016.03.010
关键词
Brightness temperature; HEMT; Ultra-low power consumption; 2DEG; Back action
资金
- National Academy of Sciences of Ukraine (NASU) [0112 U 000035]
A technically simple and physically clear method is suggested for direct measurement of the brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method was demonstrated with the pseudomorphic HEMT as a specimen. The optimal HEMT dc regime, from the point of view of the back action problem, was found to belong to the unsaturated area of the static characteristics possibly corresponding to the ballistic electron transport mode. The proposed method is believed to be a convenient tool to explore the ballistic transport, electron diffusion, 2DEG properties and other electrophysical processes in heterostructures. (C) 2016 Elsevier Ltd. All rights reserved.
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