期刊
SOLID-STATE ELECTRONICS
卷 115, 期 -, 页码 126-132出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2015.09.004
关键词
OxRAM; RRAM; Variability; Trap assisted tunneling
资金
- ST/LETI research program
- LabEx Minos [ANR-10-LABX-55-01]
- PANACHE project
This work presents a model that allows to explain the resistance variability of OxRAM devices, both in high and low resistive states. This model is based on the calculation of a 3D resistance network, using trap assisted tunneling current. The stochastic nature of the resistance is captured by random placement of traps within a specific spatial distribution. The model is able to capture both cycle-to-cycle (temporal) and device-to-device (spatial) variability. (C) 2015 Elsevier Ltd. All rights reserved.
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