期刊
SOLID STATE COMMUNICATIONS
卷 227, 期 -, 页码 19-22出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2015.11.016
关键词
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资金
- KAKENHI [15K14113, 25707031]
- Grants-in-Aid for Scientific Research [15H05886, 26600077, 15K14113, 25707031] Funding Source: KAKEN
The band gaps of isostructural Bi2OS2 and LaOBiS2 were examined using optical absorption and discussed with the band structures calculated based on the crystal structures determined, using synchrotron X-ray diffraction. The Bi 6p and S 3p orbitals in the Bi-S plane were computationally predicted to constitute the bands near the Fermi level. The optical reflectance spectra of Bi2OS2 and LaOBiS2 showed optical band gaps of similar to 1.0 eV, which were close to the computationally calculated direct band gaps of similar to 0.8 eV. Our results show that Bi2OS2 and LaOBiS2 are semiconductors containing direct band gaps of 0.8-1.0 eV, and they are suggested to be candidates for optoelectronic materials in the near-infrared region without highly toxic elements. (C) 2015 Elsevier Ltd. All rights reserved.
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