期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 145, 期 -, 页码 109-115出版社
ELSEVIER
DOI: 10.1016/j.solmat.2015.08.028
关键词
Silicon heterojunction; Transition metal oxide; Carrier selective contact
资金
- Spanish government [ENE2014-56237-C4]
- Mexican grants program CONACyT
- Erasmus Mundus Action 2 AREAS + grants program
- XaRMAE of the Generalitat de Catalunya
This work reports on a comparative study comprising three transition metal oxides, MoO3, WO3 and V2O5, acting as front p-type contacts for n-type crystalline silicon heterojunction solar cells. Owing to their high work functions ( > 5 eV) and wide energy band gaps, these oxides act as transparent hole-selective contacts with semiconductive properties that are determined by oxygen-vacancy defects (MoO3-x), as confirmed by X-ray photoelectron spectroscopy. In the fabricated hybrid structures, 15 nm thick transition metal oxide layers were deposited by vacuum thermal evaporation. Of all three devices, the V2O5/n-silicon heterojunction performed the best with a conversion efficiency of 15.7% and an open-circuit voltage of 606 mV, followed by MoO3 (13.6%) and WO3 (12.5%). These results bring into view a new silicon heterojunction solar cell concept with advantages such as the absence of toxic dopant gases and a simplified low-temperature fabrication process. (C) 2015 Elsevier B.V. All rights reserved.
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