期刊
SOLAR ENERGY
卷 136, 期 -, 页码 10-14出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.solener.2016.06.067
关键词
CdS; CdTe; Electroplating of semiconductors; Graded bandgap solar cells
Making use of previously designed and experimentally tested results of graded bandgap devices, and the comprehensive electrodeposition of semiconducting materials knowledge, a three layer n-n-p device structure was fabricated and tested for their electronic properties and solar cell performance. Glass/FTO/n-CdS/n-CdTe/p-CdTe/Au devices were fabricated and studied as a first step towards development of graded bandgap devices using electroplated materials. Efficiencies up to 15.3% were observed for lab-scale small devices. (C) 2016 Published by Elsevier Ltd.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据