Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets

2D nanomaterials have been actively utilized in non-volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D-stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re-writable, bistable, transparent, and flexible solution-processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single-or multi-component-based multilayers composed of positively charged GO (N-GO(+) or NS-GO(+)) with/without negatively charged GO(-) using layer-by-layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi-component active layer Au/[N-GO(+)/GO(-)](n)/Al/PES shows higher ON/OFF ratio of approximate to 10(5) with switching voltage of -1.9 V and higher retention stability (approximate to 10(4) s), whereas the device based on single component (Au/[N-GO(+)](n)/Al/PES) shows approximate to 10(3) ON/OFF ratio at +/- 3.5 V switching voltage. The superior ReRAM properties of the multicomponent - based device are attributed to a higher coating surface roughness. The Au/ [N-GO(+)/GO(-)](n)/Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (approximate to 10(9)) at switching voltage of +/- 2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO-based solutions. It is found that the devices containing MnO2 in the dielectric layer do not improve the ReRAM performance.