The n-ZnO/n-In2O3 heterojunction formed by a surface-modification and their potential barrier-control in methanal gas sensing

ZnO-modified In2O3 heterojunction with superior methanal (HCHO) sensing was synthesized by a simple and cost-efficient two-stage route, and the ZnO was promoted to uniformly attach on the surface of In2O3 nanostructure by using sonochemical synthesis. The In2O3 nanostructure modified with ZnO could remarkably enhance the gas response to HCHO and lower the detection limit respectively. Those were attributed to the fact that the electron transfer was modulated by the heterojunction in the interface between the ZnO and In2O3 nanostructure. The coalesced layer of the ZnO on the surface of In2O3 nanostructure facilitated to the formation of a heterojunction between the ZnO and In2O3 interface, which acted as a lever of electron transfer to increase the changes of resistance. Thus, a simple and cost-efficient method was reported here to modulate electron transfer and increase the variation amplitude of resistance in gas-sensing. The gas response of ZnO-modified In2O3 nanostructure was upgrade to more 6 times than intrinsic In2O3 for 100 ppm HCHO vapor at 300 degrees C. The results were valuable for great In2O3 nanostructure gas sensor applied to detecting toxic gas. (C) 2015 Elsevier B.V. All rights reserved.