V2O5 thin films for gas sensor applications

V2O5 thin films were deposited onto fused silica, alumina and conductometric sensor supports by means of rf reactive sputtering from a metallic vanadium target. Film thickness was varied between 200 and 600 nm. Argon-oxygen gas mixtures of different compositions controlled by the flow rate were used for sputtering. Temperature of the film substrate was kept constant at 560 K. Structural properties and phase composition of as-sputtered thin films were studied by X-ray diffraction at glancing incidence, GIXD, and Raman scattering while Scanning Electronic Microscopy (SEM) was used to investigate film morphology. Electrical properties were determined by means of impedance spectroscopy (0.11 MHz) over the temperatures range extending from RT to 620 K. Thin films of V2O5 exhibited good response towards hydrogen (5300 ppm), methane and propane (503000 ppm). (C) 2016 Elsevier B.V. All rights reserved.