期刊
SENSORS AND ACTUATORS A-PHYSICAL
卷 249, 期 -, 页码 263-268出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2016.08.036
关键词
Solar blind photodetector; MgZnO films; Responsivity; Temporal response; Cutoff wavelength; Pulsed metal organic chemical vapor deposition
资金
- US Department of Defense Army Research Office (ARO) [W911NF-14-C-00157]
Metal-semiconductor-metal (MSM) structured solar blind photodetectors were fabricated based on various Mg content wurtzite MgxZn1-xO epitaxial films grown via pulsed metal organic chemical vapor deposition. The response spectra of the devices showed a peak position that shifts from similar to 383 nm to 276 nm for Mg content, x, between 0.0 and 0.51, covering a wide portion of the ultra-violet spectral region, extending well into the solar blind window. At 10 V bias, a large responsivity of similar to 1.8 x 10(4) A/W was obtained at 276 nm for a device based on a high Mg content (x=0.51) MgZnO film. To the best of our knowledge, this responsivity is the highest ever reported for a MgZnO based device and its origin is attributed to large internal gain resulting from carrier trapping at the MgZnO/Ni/Au interface. This is confirmed by the presence of an asymmetric Schottky barrier height on the two MSM contacts. Conversely, the response speed of the devices was slow with the 10%-90% rise and fall times measured to be in the millisecond range. The results reported in this work show the realization of high responsivity MgZnO based solar blind photodetectors, providing a significant step in the development of MgZnO alloy based of detector. (C) 2016 Elsevier B.V. All rights reserved.
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