期刊
SENSORS
卷 16, 期 8, 页码 -出版社
MDPI
DOI: 10.3390/s16081249
关键词
semiconductor gas sensor; in-situ fabrication; photo-response; photo-electrochemical measurement; electron transfer
资金
- National Natural Science Foundation of China [21273037]
- National Basic Research Program of China (973 Program) [2014CB239303]
- Science & Technology Plan Project of Fujian Province [2014Y2003]
An anatase TiO2 film sensor was prepared by a facile in-situ method on the interdigitated Au electrode deposited on the alumina substrate. The structure, morphology and the optical properties of the in-situ TiO2 film sensor were characterized by X-ray diffraction, Scanning Electron Microscopy, and UV-vis diffuse reflectance spectra. The photo-assisted gas sensitivities of the prepared film towards H-2 gas were evaluated at room temperature in N-2 and synthetic air atmospheres. As compared to TiO2 film sensor prepared by drop-coating method, this in-situ TiO2 film sensor exhibited a more compact structure composed of uniform TiO2 microspheres as well as a better gas sensitivity towards H-2 under UV irradiation, especially in synthetic air. The photo-electrochemical measurements suggest that these improvements may be associated with the efficient charge transfer in the TiO2 interface induced by the TiO2 microsphere structure. This study might offer a feasible approach to develop photo-assisted gas sensors at ambient temperature.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据