期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 31, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/31/6/063002
关键词
resistance switching memory (RRAM); conductive bridge memory (CBRAM); memristor; memory scaling; emerging memory; crossbar array; metal-insulator transition
类别
资金
- European Research Council Consolidator, grant [ERC-2014-CoG-648635-RESCUE]
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and scalable memory technologies are being researched for data storage and data-driven computation. Among the emerging memories, resistive switching memory (RRAM) raises strong interest due to its high speed, high density as a result of its simple two-terminal structure, and low cost of fabrication. The scaling projection of RRAM, however, requires a detailed understanding of switching mechanisms and there are potential reliability concerns regarding small device sizes. This work provides an overview of the current understanding of bipolar-switching RRAM operation, reliability and scaling. After reviewing the phenomenological and microscopic descriptions of the switching processes, the stability of the low-and high-resistance states will be discussed in terms of conductance fluctuations and evolution in 1D filaments containing only a few atoms. The scaling potential of RRAM will finally be addressed by reviewing the recent breakthroughs in multilevel operation and 3D architecture, making RRAM a strong competitor among future high-density memory solutions.
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