期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 31, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/31/4/045005
关键词
micro-light emitting diodes; aging; InGaN; high current density; defect
类别
资金
- Engineering and Physical Sciences Research Council [EP/K00042X/1]
- Fudan University [JJH1232106]
- Engineering and Physical Sciences Research Council [EP/K00042X/1] Funding Source: researchfish
- EPSRC [EP/K00042X/1] Funding Source: UKRI
The aging characteristics of blue InGaN micro-light emitting diodes (micro-LEDs) with different sizes have been studied at an extremely high current density 3.5 kA cm(-2) for emerging micro-LED applications including visible light communication (VLC), micro-LED pumped organic lasers and optogenetics. The light output power of micro-LEDs first increases and then decreases due to the competition of Mg activation in p-GaN layer and defect generation in the active region. The smaller micro-LEDs show less light output power degradation compared with larger micro-LEDs, which is attributed to the lower junction temperature of smaller micro-LEDs. It is found that the high current density without additional junction temperature cannot induce significant micro-LED degradation at room temperature but the combination of the high current density and high junction temperature leads to strong degradation. Furthermore, the cluster LEDs, composed of a micro-LED array, have been developed with both high light output power and less light output degradation for micro-LED applications in solid state lighting and VLC.
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