Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

InxGa(1-x)As/GaAs1-yBiy/InxGa1-xAs (0.20 <= x <= 0.22, 0.035 <= y <= 0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type- I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k . p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 mu m.