期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 31, 期 9, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/31/9/093003
关键词
semipolar GaN; overgrowth; InGaN; LED
类别
资金
- UK Engineering and Physical Sciences Research Council (EPSRC) [EP/M015181/1, EP/L017024/1]
- EPSRC [EP/L017024/1, EP/H004602/1, EP/M015181/1, EP/M003132/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/M015181/1, EP/H004602/1, EP/M003132/1, EP/L017024/1] Funding Source: researchfish
The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane ( 0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.
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