期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 31, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/31/5/055010
关键词
silicon microchannel plates; oxidation; stain; micro-Raman
类别
资金
- Shanghai Pujiang Program [14PJ1403600]
- Shanghai Fundamental Key Project [11JC1403700]
- National Natural Science Foundation of China [61176108]
- PCSIRT
- Research Innovation Foundation of ECNU [78210245]
- City University of Hong Kong Applied Research Grant (ARG) [9667104]
Micro-Raman analysis was used to identify the oxidation of a silicon microchannel plate (SiMCP) and it indicated that the bend phenomenon of the SiMCP was related to the release of stress and the volume expending of the silicon wall during the oxidation process.
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