4.8 Article

Strong coupling of a single electron in silicon to a microwave photon

期刊

SCIENCE
卷 355, 期 6321, 页码 156-+

出版社

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aal2469

关键词

-

资金

  1. Army Research Office [W911NF-15-1-0149]
  2. Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4535]
  3. NSF [DMR-1409556, DMR-1420541]
  4. U.S. Department of Defense [H98230-15-C0453]
  5. Division Of Materials Research
  6. Direct For Mathematical & Physical Scien [1409556] Funding Source: National Science Foundation

向作者/读者索取更多资源

Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据