期刊
CHINESE PHYSICS LETTERS
卷 32, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/32/12/128501
关键词
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资金
- National Basic Research Program of China [2011CB301900, 2011CB922100]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
We design and fabricate 4H-SiC UV avalanche photodiodes (APDs) with positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count rate and dark count rate of the APD are also evaluated as a function of quenching resistance.
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