Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator

We report the simulation and experimental results of 1.3-mu m InGaAsP/InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-mu m InGaAsP/InP QW EAM is proposed for applications in 100G ethernet. Then 1.3-mu m InGaAsP/InP EAMs with f-3dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3V bias voltage are demonstrated.