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Topological phases in two-dimensional materials: a review

期刊

REPORTS ON PROGRESS IN PHYSICS
卷 79, 期 6, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/0034-4885/79/6/066501

关键词

topological phase; Hall effects; electron transport

资金

  1. 100-Talent Program of Chinese Academy of Sciences
  2. China Government Youth 1000-Plan Talent Program
  3. National Natural Science Foundation of China (NNSFC) [11474265]
  4. Fundamental Research Funds for the Central Universities [WK3510000001, WK2030020027]
  5. Anhui Provincial Natural Science Foundation
  6. Welch Foundation [F-1255]
  7. DOE (Division of Materials Science and Engineering) [DE-FG03-02ER45958]
  8. MOST Project of China [2012CB921300, 2013CB921900]
  9. NNSFC [91121004]

向作者/读者索取更多资源

Topological phases with insulating bulk and gapless surface or edge modes have attracted intensive attention because of their fundamental physics implications and potential applications in dissipationless electronics and spintronics. In this review, we mainly focus on recent progress in the engineering of topologically nontrivial phases (such as Z(2) topological insulators, quantum anomalous Hall effects, quantum valley Hall effects etc) in two-dimensional systems, including quantum wells, atomic crystal layers of elements from group III to group VII, and the transition metal compounds.

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