期刊
PROGRESS IN PHOTOVOLTAICS
卷 24, 期 6, 页码 830-835出版社
WILEY
DOI: 10.1002/pip.2739
关键词
tunnel oxide; passivated contact; room temperature; large area; n-type Cz wafer; screen-printed
资金
- DOE [DE-EE0006336, DE-EE0006815]
This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25 degrees C) and capped with n(+) polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iV(oc) of 714mV and saturation current density J(ob)' of 10.3 fA/cm(2) for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm(2) commercial grade n-type Czochralski wafers. Copyright (C) 2016 John Wiley & Sons, Ltd.
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