相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Direct-Gap 2.1-2.2 eV AlInP Solar Cells on GaInAs/GaAs Metamorphic Buffers
Michelle Vaisman et al.
IEEE JOURNAL OF PHOTOVOLTAICS (2016)
Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy
P. Dai et al.
JOURNAL OF CRYSTAL GROWTH (2015)
Investigations on AlxGa1-xAs Solar Cells Grown by MOVPE
Stefan Heckelmann et al.
IEEE JOURNAL OF PHOTOVOLTAICS (2015)
Quadruple-Junction Inverted Metamorphic Concentrator Devices
Ryan M. France et al.
IEEE JOURNAL OF PHOTOVOLTAICS (2015)
Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells
P. Espinet-Gonzalez et al.
PROGRESS IN PHOTOVOLTAICS (2015)
High efficiency micro solar cells integrated with lens array
Onur Fidaner et al.
APPLIED PHYSICS LETTERS (2014)
Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
Frank Dimroth et al.
PROGRESS IN PHOTOVOLTAICS (2014)
Highly conductive p + + -AlGaAs/n + + -GaInP tunnel junctions for ultra-high concentrator solar cells
Enrique Barrigon et al.
PROGRESS IN PHOTOVOLTAICS (2014)
Temperature dependence of diffusion length, lifetime and minority electron mobility in GaInP
F. J. Schultes et al.
APPLIED PHYSICS LETTERS (2013)
Variable-angle spectroscopic ellipsometry of InAlP native oxide dielectric layers for GaAs metal-oxide-semiconductor field effect transistor applications
Wangqing Yuan et al.
JOURNAL OF APPLIED PHYSICS (2013)
Interface properties of GaInP/Ge hetero-structure sub-cells of multi-junction solar cells
A. S. Gudovskikh et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2012)
Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics
I. Garcia et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2012)
Concentration photovoltaic optical system irradiance distribution measurements and its effect on multi-junction solar cells
Rebeca Herrero et al.
PROGRESS IN PHOTOVOLTAICS (2012)
On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy
Roberto Jakomin et al.
THIN SOLID FILMS (2012)
Experimental Analysis of Majority Carrier Transport Processes at Heterointerfaces in Photovoltaic Devices
R. Hoheisel et al.
IEEE JOURNAL OF PHOTOVOLTAICS (2012)
Is Auger recombination the ultimate performance limiter in concentrator solar cells?
Alexis Vossier et al.
APPLIED PHYSICS LETTERS (2010)
Tunnel Diode Modeling, Including Nonlocal Trap-Assisted Tunneling: A Focus on III-V Multijunction Solar Cell Simulation
Mathieu Baudrit et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
High performance Fresnel-based photovoltaic concentrator
Pablo Benitez et al.
OPTICS EXPRESS (2010)
III-phosphides heterojunction solar cell interface properties from admittance spectroscopy
A. S. Gudovskikh et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2009)
Properties of interfaces in GaInP solar cells
A. S. Gudovskikh et al.
SEMICONDUCTORS (2009)
B-coefficient in n-type GaAs
G. B. Lush
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2009)
Numerical modelling of GaInP solar cells with AlInP and AlGaAs windows
A. S. Gudovskikh et al.
THIN SOLID FILMS (2008)
High-flux characterization of ultrasmall multijunction concentrator solar cells
Omer Korech et al.
APPLIED PHYSICS LETTERS (2007)
Dependence of carrier lifetime in germanium on resisitivity and carrier injection level
E. Gaubas et al.
APPLIED PHYSICS LETTERS (2006)
A comparative study of BSF layers for GaAs-based single-junction or multijunction concentrator solar cells
Beatriz Galiana et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2006)
Evaluation of InGaP/InGaAs/Ge triple-junction solar cell and optimization of solar cell's structure focusing on series resistance for high-efficiency concentrator photovoltaic systems
K Nishioka et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2006)
Generalized matrix method for calculation of internal light energy flux in mixed coherent and incoherent multilayers
E Centurioni
APPLIED OPTICS (2005)
A 3-D model for concentrator solar cells based on distributed circuit units
B Galiana et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2005)
Study of band gap narrowing effect in n-GaAs for the application of far-infrared detection
HT Luo et al.
PHYSICA B-CONDENSED MATTER (2002)
Empirical low-field mobility model for III-V compounds applicable in device simulation codes
M Sotoodeh et al.
JOURNAL OF APPLIED PHYSICS (2000)