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注意：仅列出部分参考文献，下载原文获取全部文献信息。Solar cell efficiency tables (version 46)
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M. A. Steiner et al.
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Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis
Nikhil Jain et al.
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Strong Internal and External Luminescence as Solar Cells Approach the Shockley-Queisser Limit
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Fundamental losses in solar cells
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