期刊
PROGRESS IN PHOTOVOLTAICS
卷 24, 期 12, 页码 1615-1625出版社
WILEY
DOI: 10.1002/pip.2795
关键词
artificial grain boundary; phosphorus diffusion gettering; internal gettering; multicrystalline Si
资金
- Grants-in-Aid for Scientific Research [15K21072] Funding Source: KAKEN
We investigated the effect of the grain boundary (GB) character of multicrystalline Si (mc-Si) on the efficiency of external and internal gettering of impurities during phosphorus diffusion gettering (PDG). We utilized seed crystals with an artificially designed GB configuration to grow mc-Si ingots with different artificial GB characters. PDG combined with an originally developed multiple-cycle gettering technique at low temperature was introduced on intentionally Fe-contaminated mc-Si samples to enhance external and internal gettering. A significant positive PDG effect was observed after PDG combined with the multiple-cycle technique, as evidenced by the increase in lifetimes after PDG. A bright cloud-like photoluminescence signal around contaminated GBs was observed for artificial sigma 5-GBs and tilt-GBs after PDG, suggesting the enhancement of the internal gettering efficiency by leaving a cleaner area around the GBs. This result suggests the importance of the control of crystal defect character as well as impurities in mc-Si ingots, which could strongly affect the PDG efficiency. Copyright (c) 2016 John Wiley & Sons, Ltd.
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