4.5 Article

Development and growth time optimization of boron-doped micro-crystalline, undoped micro-crystalline and undoped nano-crystalline composite diamond film

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SAGE PUBLICATIONS LTD
DOI: 10.1177/0954405416666902

关键词

Composite diamond film; adhesion; surface hardness; surface roughness; growth time

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Based on a well-designed growth procedure, a tri-material, namely, a three-layer boron-doped micro-crystalline, undoped micro-crystalline and undoped nano-crystalline composite diamond film, is deposited on the pretreated WC-6wt% Co substrate, the basic characters of which are systematically studied and compared with some other commonly used diamond films. Besides, the growth times for three respective layers are accordingly determined. It is further clarified that the underlying boron-doped micro-crystalline diamond layer can well adhere to the WC-Co substrate due to either the reduction in the residual stress or the formation of B-Co compounds. There is no doubt that the surface undoped nano-crystalline diamond layer with relatively lower hardness and initial surface roughness is more convenient to be polished to the required surface roughness. Moreover, when the growth times for the middle undoped micro-crystalline diamond layer and the surface undoped nano-crystalline diamond layer are both appropriate, the undoped micro-crystalline diamond layer with extremely high diamond quality and hardness can effectively reinforce the surface hardness of the whole composite film. Based on the discussions on the influences of the growth times for the different layers on the performance of the composite diamond film, the growth times for the boron-doped micro-crystalline diamond, undoped micro-crystalline diamond and undoped nano-crystalline diamond layers are, respectively, determined as 4, 4 and 2h. Under such conditions, the reinforcement effect of the middle layer on the surface hardness can be guaranteed, and the undoped nano-crystalline diamond grains have totally covered the undoped micro-crystalline diamond layer.

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