期刊
PROCEEDINGS OF THE IEEE
卷 104, 期 10, 页码 1831-1843出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2016.2543782
关键词
Domain-wall devices; magnetic random access memories; spin-orbit torques; spin-transfer torques
资金
- National Research Foundation of Korea (NRF) [2015M3D1A1070465]
- National Research Foundation of Korea [2015M3D1A1070465] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Spin-transfer torques can switch magnetizations via a current passing through a magnetic tunnel junction, an effect that is being pursued as the switching mechanism in spin-transfer torque magnetic random access memory. Three-terminal devices are also possible. One mechanism is to have a free layer that contains a domain wall that can be manipulated by spin-transfer torques and moved between two configurations that can be read by a separate connection. An alternate approach uses the recent development of spin-orbit torques, which offer an efficient way of manipulating the magnetization of a tunnel junction by current passing through an adjacent layer. These torques allow for the separation of reading and writing currents through three-terminal devices structures. This paper presents the basic principles of spin-orbit torques, the distinguishing features of spin-orbit-torque-induced magnetization dynamics as compared to magnetization dynamics driven by conventional spin-transfer torques. From the application point of view, it presents the pros and cons of spin-orbit-torque-based three-terminal devices including magnetic random access memories. Then, it discusses domain-wall-based three-terminal devices and the advantages and disadvantages of each.
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