4.8 Article

Sublattice Interference as the Origin of σ Band Kinks in Graphene

期刊

PHYSICAL REVIEW LETTERS
卷 116, 期 18, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.116.186802

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资金

  1. U.S. Department of Energy, Office of Sciences [DE-AC02-05CH11231]
  2. [IBS-R014-D1]
  3. Ministry of Science, ICT & Future Planning, Republic of Korea [IBS-R014-D1-2016-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  4. National Research Foundation of Korea [2016H1A2A1908988] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Kinks near the Fermi level observed in angle-resolved photoemission spectroscopy (ARPES) have been widely accepted to represent electronic coupling to collective excitations, but kinks at higher energies have eluded a unified description. We identify the mechanism leading to such kink features by means of ARPES and tight-binding band calculations on sigma bands of graphene, where anomalous kinks at energies as high as similar to 4 eV were reported recently [Phys. Rev. Lett. 111, 216806 (2013)]. We found that two s bands show a strong intensity modulation with abruptly vanishing intensity near the kink features, which is due to sublattice interference. The interference induced local singularity in the matrix element is a critical factor that gives rise to apparent kink features, as confirmed by our spectral simulations without involving any coupling to collective excitations.

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