期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 18, 期 2, 页码 700-703出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5cp06507k
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In this work, we investigated SiOx-based interfacial resistive switching in planar metal-insulator-metal structures using physical/chemical/electrical analyses. This work helps clarify the interfacial reaction process and mechanism in SiOx, and also shows the potential for high temperature operation in future nonvolatile memory applications.
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