相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Resistive switching behavior of BaTiO3/La0.8Ca0.2MnO3 heterostructures
S. Y. Wang et al.
PHYSICS LETTERS A (2015)
Investigation of continuous changes in the electric-field-induced electronic state in Bi1-xCaxFeO3-δ
Atsushi Ikeda-Ohno et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2014)
Bipolar resistance switching and photocurrent in a BaTiO3-δ thin film
Y. A. Park et al.
JOURNAL OF APPLIED PHYSICS (2013)
Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Domain wall functionality in BiFeO3
Jan Seidel et al.
PHASE TRANSITIONS (2013)
Doping BiFeO3: approaches and enhanced functionality
Chan-Ho Yang et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2012)
Prominent electrochromism through vacancy-order melting in a complex oxide
J. Seidel et al.
NATURE COMMUNICATIONS (2012)
Unipolar resistive switching in high-resistivity Pr0.7Ca0.3MnO3 junctions
Song-Lin Li et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2011)
Controlled cation stoichiometry in pulsed laser deposition-grown BaTiO3 epitaxial thin films with laser fluence
Daisuke Kan et al.
APPLIED PHYSICS LETTERS (2011)
Dynamic Conductivity of Ferroelectric Domain Walls in BiFeO3
Peter Maksymovych et al.
NANO LETTERS (2011)
Pulsed laser deposition-induced reduction of SrTiO3 crystals
Matthew L. Scullin et al.
ACTA MATERIALIA (2010)
Direct Identification of the Conducting Channels in a Functioning Memristive Device
John Paul Strachan et al.
ADVANCED MATERIALS (2010)
High switching endurance in TaOx memristive devices
J. Joshua Yang et al.
APPLIED PHYSICS LETTERS (2010)
Clockwise vs Counter-Clockwise I-V Hysteresis of Point-Contact Metal-Tip/Pr0.7Ca0.3MnO3/Pt Devices
Gang Jian-Lei et al.
CHINESE PHYSICS LETTERS (2010)
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon et al.
NATURE NANOTECHNOLOGY (2010)
Ferroelectric Schottky diode behavior from a SrRuO3-Pb(Zr0.2Ti0.8)O3-Ta structure
Lucian Pintilie et al.
PHYSICAL REVIEW B (2010)
Switching dynamics in titanium dioxide memristive devices
Matthew D. Pickett et al.
JOURNAL OF APPLIED PHYSICS (2009)
Resistive switching properties and low resistance state relaxation in Al/Pr0.7Ca0.3MnO3/Pt junctions
Song-Lin Li et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2009)
Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
A. Gruverman et al.
NANO LETTERS (2009)
Giant tunnel electroresistance for non-destructive readout of ferroelectric states
V. Garcia et al.
NATURE (2009)
Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films
C. -H. Yang et al.
NATURE MATERIALS (2009)
Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3
T. Choi et al.
SCIENCE (2009)
Polarization Control of Electron Tunneling into Ferroelectric Surfaces
Peter Maksymovych et al.
SCIENCE (2009)
Random circuit breaker network model for unipolar resistance switching
Seung Chul Chae et al.
ADVANCED MATERIALS (2008)
The missing memristor found
Dmitri B. Strukov et al.
NATURE (2008)
Resistive switching in transition metal oxides
Akihito Sawa
MATERIALS TODAY (2008)
Layer-by-layer and pseudo-two-dimensional growth modes for heteroepitaxial BaTiO3 films by exploiting kinetic limitations
Junsoo Shin et al.
APPLIED PHYSICS LETTERS (2007)
Electrocoloration and oxygen vacancy mobility of BaTiO3
H. -I. Yoo et al.
JOURNAL OF APPLIED PHYSICS (2007)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Tunnel junctions with multiferroic barriers
Martin Gajek et al.
NATURE MATERIALS (2007)
Resistive hystersis effects in perovskite oxide-based heterostructure junctions
M. P. Singh et al.
APPLIED PHYSICS LETTERS (2006)
Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
K. Kinoshita et al.
APPLIED PHYSICS LETTERS (2006)
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
BJ Choi et al.
JOURNAL OF APPLIED PHYSICS (2005)
The influence of an extrinsic interfacial layer on the polarization of sputtered BaTiO3 film -: art. no. 202905
YW Cho et al.
APPLIED PHYSICS LETTERS (2005)
Critical thickness of ultrathin ferroelectric BaTiO3 filMS -: art. no. 102907
YS Kim et al.
APPLIED PHYSICS LETTERS (2005)
On a novel ferro resistive random access memory (FRRAM): Basic model and first experiments
R Meyer et al.
INTEGRATED FERROELECTRICS (2004)
Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface
A Sawa et al.
APPLIED PHYSICS LETTERS (2004)
Resistive switching in metal-ferroelectric-metal junctions
JR Contreras et al.
APPLIED PHYSICS LETTERS (2003)
Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface
A Baikalov et al.
APPLIED PHYSICS LETTERS (2003)
Transport properties of LaTiO3+x films and heterostructures
A Schmehl et al.
APPLIED PHYSICS LETTERS (2003)
Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals
Y Watanabe et al.
APPLIED PHYSICS LETTERS (2001)
Alternative dielectrics to silicon dioxide for memory and logic devices
AI Kingon et al.
NATURE (2000)
Reproducible switching effect in thin oxide films for memory applications
A Beck et al.
APPLIED PHYSICS LETTERS (2000)
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
SQ Liu et al.
APPLIED PHYSICS LETTERS (2000)