期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 18, 期 1, 页码 197-204出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5cp05333a
关键词
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资金
- Australian Research Council
- National Research Foundation of Korea - Ministry of Education, Science, and Technology [NRF-2013S1A2A2035418]
- Japan Science and Technology Agency, CREST [24760009]
- Ministry of Education, Culture, Sports, Science and Technology of Japan
BaTiO3-delta, i.e. oxygen-deficient barium titanate (BaTiO3), thin films grown on GdScO3(110) substrates with SrRuO3 conductive electrodes by pulsed laser deposition are studied by X-ray diffraction and conductive AFM to characterize their structure and nanoscale electronic properties. Bias- and time dependent resistive switching measurements reveal a strong dependence on the oxygen vacancy concentration, which can be tuned by after-growth oxygen cooling conditions of thin films. The results indicate that the resistive switching properties of BaTiO3-delta can be enhanced by controlling oxygen deficiency and provide new insight for potential non-volatile resistive random-access memory (RRAM) applications.
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