期刊
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
卷 253, 期 12, 页码 2478-2480出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201600234
关键词
2D materials; cationic diffusion barrier; graded bandgap; hexagonal boron nitride (h-BN); perovskites
资金
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05CH11231, KC2207]
- National Science Foundation [1542741]
- Office of Naval Research (MURI) [N0014-16-1-2229]
- NSF Graduate Fellowship Program
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1542741] Funding Source: National Science Foundation
We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h-BN) as a cationic separator. With this technique, we successfully deposit CH3NH3PbI3-xBrx on CH3NH3SnI3 without cation mixing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
