期刊
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
卷 253, 期 12, 页码 2326-2330出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201600283
关键词
2D peak; Boron nitride; graphene; Raman spectroscopy; tungsten diselenide
资金
- Helmholtz Nanoelectronic Facility (HNF)
- Deutsche Forschungsgemeinschaft
- ERC [280140]
- EU [NECT-ICT-604391]
- National Research Fund (FNR) Luxembourg
- Elemental Strategy Initiative
- JSPS
- European Research Council (ERC) [280140] Funding Source: European Research Council (ERC)
The Raman 2D line of graphene is widely used for device characterization and during device fabrication as it contains valuable information on, e.g., the direction and magnitude of mechanical strain and doping. Here, we present systematic asymmetries in the 2D line shape of exfoliated graphene and graphene grown by chemical vapor deposition. Both graphene crystals are fully encapsulated in van der Waals heterostructures, where hexagonal boron nitride and tungsten diselenide are used as substrate materials. In both material stacks, we find very low doping values and extremely homogeneous strain distributions in the graphene crystal, which is a hall mark of the outstanding electronic quality of these samples. By fitting double Lorentzian functions to the spectra to account for the contributions of inner and outer processes to the 2D peak, we find that the splitting of the sub-peaks, 6.6 +/- 0.5cm(-1) (hBN-Gr-WSe2) and 8.9 +/- 1.0cm(-1) (hBN-Gr-hBN), is significantly lower than the values reported in previous studies on suspended graphene.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据