Electrical transport properties of p-type 4H-SiC

The Hall hole density pH and Hall mobility mu(H) in highly aluminum-doped 4H-SiC have been investigated in the wide temperature range between 100 and 900 K. After an overview of the literature data related to the analysis of electrical transport experiments, a model taking into account the two uppermost valence bands of heavy and lights holes, one single acceptor energy E-A and the empirical Hall factor r(Hexp) has been discussed in details. The limits of the applied model as a function of temperature and acceptor concentration have been considered. For each analyzed sample, the acceptor density N-A and the compensation ratio N-D/N-A have been experimentally assessed by capacitance-voltage and secondary ion mass spectroscopy measurements. Finally, the Hall carrier concentration vs. doping level N-A-N-D as well as ionization energy of acceptor E-A vs. acceptor concentration NA in 4H-SiC have been discussed. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim