期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 213, 期 7, 页码 1767-1773出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201532939
关键词
amorphous semiconductors; electronic transport; magnetron sputtering; thin films; ZnON
We discuss the carrier transport mechanism in amorphous zinc oxynitride (ZnON) thin films fabricated by means of long-throw magnetron sputtering. ZnON films were radio-frequency sputtered from a metallic zinc target in a reactive atmosphere consisting of and Ar. The electrical conductivity of the films was controlled via variation of the deposition pressure and substrate temperature. Room temperature deposition yields amorphous, n-type semiconducting ZnON thin films with a maximum Hall mobility of and carrier concentrations of . The mobility can be further increased up to the range by moderate substrate heating or annealing up to while maintaining the amorphous phase. From temperature-dependent Hall effect measurements, we deduced that a percolation conduction model is most likely for the electron transport in the as-grown ZnON thin films. For annealed samples, a quasi-metallic behavior is observed. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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