期刊
ORGANIC ELECTRONICS
卷 31, 期 -, 页码 227-233出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2016.01.027
关键词
Nanoimprint lithography; Vertical; Organic transistor; P3HT; Lift-off
A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 x 10(-5) mA/cm(2) and high ON/OFF current ratio as high as 10(5). (C) 2016 Elsevier B.V. All rights reserved.
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