期刊
OPTIK
卷 127, 期 20, 页码 8317-8325出版社
ELSEVIER GMBH, URBAN & FISCHER VERLAG
DOI: 10.1016/j.ijleo.2016.06.033
关键词
Ga doped ZnO; Chemical spray pyrolysis; Optoelectronic properties; Stress
类别
资金
- Botswana International University of Science and Technology
Undoped and Ga doped ZnO thin films were deposited on borosilicate glass substrates via a simple but effective chemical spray pyrolysis technique. The samples were characterised by X-ray diffractometer, UV-vis spectrophotometry, Scanning electron microscopy and I-V measurements. The structural, morphological and optical properties were studied as a function of increasing Ga doping concentration from 0 to 7 at.%. XRD results revealed that the films were polycrystalline with hexagonal wurtzite crystal structure. Increasing Ga dopant concentration decreased the crystallite size from 74 to 19 nm whilst the band gap, dislocation density and lattice strain shifted to higher values. All the films exhibited high transmittance of about 85% in the entire visible spectral range. Lowest resistivity of 1.47 x 10(-4) Omega cm was obtained at 3 at.% Ga concentration. (C) 2016 Elsevier GmbH. All rights reserved.
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