4.6 Article

Synchronization of two GaAs photoconductive semiconductor switches triggered by two laser diodes

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OPTICS LETTERS
卷 41, 期 18, 页码 4387-4389

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OPTICAL SOC AMER
DOI: 10.1364/OL.41.004387

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  1. National Basic Research Program of China [2014CB339802]
  2. National Natural Science Foundation of China (NSFC) [61427814, 51377133]
  3. Ultrafast Photo-Electronic Technology Innovation Group of Shaanxi Province [2014KCT-13]

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In this Letter, we show the synchronization of two 2-mm-gap gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS), which are in parallel and triggered by two laser diodes (LDs) independently. The comparison of the synchronization is measured by varying the bias electric field and optical excitation energy, respectively. An optimum synchronization is achieved as low as 200.5 ps, while the GaAs PCSS are biased at 1.2 kV with optical excitation energy of 1.91 mu J. The simulations demonstrate the relationship between the synchronization, the carriers average drift velocity, and the number of carriers undergoing intervalley scattering. (C) 2016 Optical Society of America

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