Hetero-core III-V/Si microlaser

We design and demonstrate optically pumped microlasers with a hetero-core cavity formed by III-V and silicon-on- insulator (SOI) materials. Hetero-core cavities with identical lateral dimension are fabricated. The cavity is formed by III-V layer with thickness of 210 nm on top of SOI layer with thickness of 300 nm via SiO2 interlayer wafer bonding. Continuous wave laser operation is achieved for a diameter down to 2 mu m with a corresponding mode volume of 0.07.3 lambda(3) and quality factor of 1.3 x 10(4). The architecture renders an alternative laser structure for heterogeneous laser-on-chip, with no dedicated vertical coupling mechanism needed between the two materials' layers. (C) 2016 Optical Society of America