期刊
OPTICS LETTERS
卷 41, 期 18, 页码 4324-4327出版社
OPTICAL SOC AMER
DOI: 10.1364/OL.41.004324
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资金
- Engineering and Physical Sciences Research Council (EPSRC) [EP/L01162X/1]
- National Research Foundation of Singapore (NRF) [NRF-CRP12-2013-04]
- EPSRC [EP/L01162X/1, EP/N00762X/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [1238894, EP/N00762X/1, EP/L01162X/1] Funding Source: researchfish
A broad transparency range of its constituent materials and compatibility with standard fabrication processes make germanium-on-silicon (Ge-on-Si) an excellent platform for the realization of mid-infrared photonic circuits. However, the comparatively large Ge waveguide thickness and its moderate refractive index contrast with the Si substrate hinder the implementation of efficient fiber-chip grating couplers. We report for the first time, to the best of our knowledge, a single-etch Ge-on-Si grating coupler with an inversely tapered access stage, operating at a 3.8 mu m wavelength. Optimized grating excitation yields a coupling efficiency of -11 dB (7.9%), the highest value reported for a mid-infrared Ge-on-Si grating coupler, with reflectivity below -15 dB (3.2%). The large periodicity of our higher-order grating design substantially relaxes the fabrication constraints. We also demonstrate that a focusing geometry allows a 10-fold reduction in inverse taper length, from 500 to 50 mu m. (C) 2016 Optical Society of America
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