期刊
OPTICS EXPRESS
卷 24, 期 2, 页码 1358-1367出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.24.001358
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资金
- Federal Ministry of Education and Research (BMBF) under project UltraLowPow [16ES0060 K]
- Royal Society International Exchanges [IE131593]
We present results on CVD growth and electro-optical characterization of Ge0.92Sn0.08/Ge p-i-n heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn active layers in different LED geometries, such as double heterostructures and multi quantum wells is discussed based on electroluminescence data. Theoretical calculations by effective mass and 6 band k center dot p method reveal low barrier heights for this specific structure. Best configurations offer only a maximum barrier height for electrons of about 40 meV at the Gamma point at room temperature (e.g. 300 K), evidently insufficient for proper light emitting devices. An alternative solution using SiGeSn as barrier material is introduced, which provides appropriate band alignment for both electrons and holes resulting in efficient confinement in direct bandgap GeSn wells. Finally, epitaxial growth of such a complete SiGeSn/GeSn/SiGeSn double heterostructure including doping is shown. (C)2016 Optical Society of America
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