期刊
OPTICS EXPRESS
卷 24, 期 13, 页码 13824-13831出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.24.013824
关键词
-
类别
资金
- National Natural Science Foundation of China [61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, 61321063]
- One Hundred Person Project of the Chinese Academy of Sciences
- Basic Research Project of Jiangsu Province [BK20130362]
A series of samples with varying growth pressure are grown and their optical and structural properties are investigated. It is found that the residual carbon concentration decreases when the reactor pressure increases from 80 to 450 Torr during the InGaN/GaN multiple quantum well growth. It results in an enhanced peak intensity of electroluminescence because carbon impurities can induce deep energy levels and act as non-radiative recombination centers in InGaN layers. (C) 2016 Optical Society of America
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据