期刊
OPTICS EXPRESS
卷 24, 期 12, 页码 12501-12506出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.24.012501
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- Singapore A*STAR-MINDEF [1423300091]
An AlN electro-optic phase shifter with a parallel plate capacitor structure is fabricated on Si using the back-end complementary metal-oxide-semiconductor technology, which is feasible for multilayer photonics integration. The modulation efficiency (V-pi center dot L-pi product) measured from the fabricated waveguide-ring resonators and Mach-Zehnder Interferometer (MZI) modulators near the 1550-nm wavelength is similar to 240 V center dot cm for the transverse electric (TE) mode and similar to 320 V center dot cm for the transverse magnetic (TM) mode, from which the Pockels coefficient of the deposited AlN is deduced to be similar to 1.0 pm/V for both TE and TM modes. The methods for further modulation efficiency improvement are addressed. (c) 2016 Optical Society of America
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