期刊
OPTICS EXPRESS
卷 24, 期 16, 页码 18428-18435出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.24.018428
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资金
- New Energy and Industrial Technology Development Organization (NEDO)
- Project for Developing Innovation Systems of Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- Japan Society for the Promotion of Science (JSPS) [15H05700]
- Grants-in-Aid for Scientific Research [26420300] Funding Source: KAKEN
We demonstrate direct modulation of an InAs/GaAs quantum dot (QD) laser on Si. A Fabry-Perot QD laser was integrated on Si by an ultraviolet-activated direct bonding method, and a cavity was formed using cleaved facets without HR/AR coatings. The bonded laser was operated under continuous-wave pumping at room temperature with a threshold current of 41 mA and a maximum output power of 30 mW (single facet). Even with such a simple device structure and fabrication process, our bonded laser is directly modulated using a 10 Gbps non-return-to-zero signal with an extinction ratio of 1.9 dB at room temperature. Furthermore, 6 Gbps modulation with an extinction ratio of 4.5 dB is achieved at temperatures up to 60 degrees C without any current or voltage adjustment. These results of device performances indicate an encouraging demonstration on III-V QD lasers on Si for the applications of the photonic integrated circuits. (C) 2016 Optical Society of America
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