期刊
OPTICAL MATERIALS
卷 58, 期 -, 页码 107-112出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.optmat.2016.03.043
关键词
Asymmetric double quantum well; Nonlinear optical properties; Electric and magnetic fields; Intense laser field
资金
- Scientific Research Project Fund of Cumhuriyet University [TEKNO-007]
- project EIA-UdeA (Efectos de laser intenso sobre las propiedades opticas de nanoestructuras semiconductoras de InGaAsN/GaAs y GaAlAs/GaAs.) Escuela de Ingenieria de Antioquia.
In the present study, the effects of electric and magnetic fields on the linear and third-order nonlinear optical absorption coefficients and relative change of the refractive index in asymmetric GaAs/GaAlAs double quantum wells under intense laser fields are theoretically investigated. The electric field is oriented along the growth direction of the heterostructure while the magnetic field is taken in-plane. The intense laser field is linear polarization along the growth direction. Our calculations are made using the effective-mass approximation and the compact density-matrix approach. Intense laser effects on the system are investigated with the use of the Floquet method with the consequent change in the confinement potential of heterostructures. Our results show that the increase of the electric and magnetic fields blue-shifts the peak positions of the total absorption coefficient and of the total refractive index while the increase of the intense laser field firstly blue-shifts the peak positions and later results in their red-shifting. (C) 2016 Elsevier B.V. All rights reserved.
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