期刊
OPTICAL ENGINEERING
卷 55, 期 8, 页码 -出版社
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
DOI: 10.1117/1.OE.55.8.081312
关键词
solid state lasers; laser applications; optoelectronics
类别
资金
- National Natural Science Foundation of China [51422205, 51272131]
- Natural Science Foundation for Distinguished Young Scholars of Shandong Province [JQ201415]
- Taishan Scholar Foundation of Shandong Province, China
We demonstrate a passively Q-switched Yb3+-doped ScBO3 bulk laser using a black phosphorous (BP) saturable absorber, a two-dimensional semiconductor. The response spectra of BP show that it is suitable as a universal switcher in the spectral range from the visible to midinfrared band. Considering the saturable absorption properties of BP and emission properties of Yb3+-doped crystals, the passively Q-switched bulk laser pulses were realized with the Yb3+:ScBO3 crystal as a gain material and a fabricated BP sample as a Q-switcher. Because of the large energy storage capacity of Yb3+:ScBO3, the maximum output energy is obtained to be 1.4 mu J, which is comparable with the previous reported maximum energy of graphene Q-switched lasers. The obtained results identify the potential capability of BP as a pulse modulator in bulk lasers, and BP plays an increasingly important role in a wide range of its applications, including photonics and optoelectronics. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
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