期刊
OPTICAL AND QUANTUM ELECTRONICS
卷 48, 期 3, 页码 -出版社
SPRINGER
DOI: 10.1007/s11082-016-0464-7
关键词
InGaN/GaN multiple quantum well; Light-emitting diodes; V-shaped pits; Simulation
资金
- National Natural Science Foundation of China [11364034, 61334001]
- Key Technology Research and Development Program of Jiangxi province [20141BBE50035, 20151BBE50111]
Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes with different density and size of V-shaped pits are numerically investigated. Simulation results show that internal quantum efficiency is firstly enhanced and then reduced with an increase in the density and size of pits. It is found that the area ratio of pits accounting for the last QW is the key factor. The optimal value of area ratio is about 50 % at the current density of 35A/cm(2).
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