期刊
出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2016.03.028
关键词
III nitrides; Rare earth; Europium; Implantation; LED
An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 degrees C efficiently decreases implantation damage and optically activates the Eu ions. However, the electrical properties of the p-n junction deteriorate possibly due to the formation of conducting paths along dislocations during the extreme annealing conditions. (C) 2016 Elsevier B.V. All rights reserved.
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