Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices

An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 degrees C efficiently decreases implantation damage and optically activates the Eu ions. However, the electrical properties of the p-n junction deteriorate possibly due to the formation of conducting paths along dislocations during the extreme annealing conditions. (C) 2016 Elsevier B.V. All rights reserved.