期刊
出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nima.2016.03.049
关键词
Silicon detectors; Avalanche multiplication; LGAD; Process technology; Oxide charge
类别
资金
- Spanish Ministry of Education and Science through the Particle Physics National Program [FPA2013-48387-C6-2-P, FPA2013-48308-C2-2-P]
- European Project Advanced European Infrastructures for Detectors and Accelerators [AIDA-2020-INFRAIA-2015]
- CERN RD50 collaboration
Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain 10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. This work deals with the critical technological aspects required to optimize the LGAD structure. The impact of several design strategies for the device periphery is evaluated with the aid of TCAD simulations, and compared with the experimental results obtained from the first LGAD prototypes fabricated at the IMB-CNM clean room. Solutions for the peripheral region improvement are also provided. (C) 2016 Elsevier B.V. All rights reserved.
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