4.6 Article

Exciton ionization in multilayer transition-metal dichalcogenides

期刊

NEW JOURNAL OF PHYSICS
卷 18, 期 -, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/18/7/073043

关键词

transition-metal dichalcogenides; exciton ionization; mott-wannier excitons

资金

  1. Center for Nanostructured Graphene (CNG)
  2. QUSCOPE center
  3. Danish National Research Foundation [DNRF103]
  4. Villum foundation
  5. NSF [ECCS 1509094]
  6. Villum Fonden [00007335] Funding Source: researchfish
  7. Div Of Electrical, Commun & Cyber Sys
  8. Directorate For Engineering [1509094] Funding Source: National Science Foundation

向作者/读者索取更多资源

Photodetectors and solar cells based on materials with strongly bound excitons rely crucially on field-assisted exciton ionization. We study the ionization process in multilayer transition-metal dichalcogenides (TMDs) within the Mott-Wannier model incorporating fully the pronounced anisotropy of these materials. Using complex scaling, we show that the field-dependence of the ionization process is strongly dependent on orientation. Also, we find that direct and indirect excitons behave qualitatively differently as a result of opposite effective anisotropy of these states. Based on first-principles material parameters, an analysis of several important TMDs reveals WSe2 and MoSe2 to be superior for applications relying on ionization of direct and indirect excitons, respectively.

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