期刊
CHEMICAL SOCIETY REVIEWS
卷 44, 期 9, 页码 2615-2628出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4cs00399c
关键词
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资金
- MOE under AcRF Tier 2 [ARC 26/13, MOE2013-T2-1-034]
- AcRF Tier 1 [RG 61/12, RGT18/13, RG5/13]
- Start-Up Grant [M4080865.070.706022]
- Singapore Millennium Foundation in Singapore
- National Research Foundation, Prime Minister's Office, Singapore
Ultrathin two-dimensional (2D) nanomaterials, such as graphene and MoS2, hold great promise for electronics and optoelectronics due to their distinctive physical and electronic properties. Recent progress in high-yield, massive production of ultrathin 2D nanomaterials via various solution-based methods allows them to be easily integrated into electronic devices via solution processing techniques. Non-volatile resistive memory devices based on ultrathin 2D nanomaterials have been emerging as promising alternatives for the next-generation data storage devices due to their high flexibility, three-dimensional-stacking capability, simple structure, transparency, easy fabrication and low cost. In this tutorial review, we will summarize the recent progress in the utilization of solution-processed ultrathin 2D nanomaterials for fabrication of non-volatile resistive memory devices. Moreover, we demonstrate how to achieve excellent device performance by engineering the active layers, electrodes and/or device structure of resistive memory devices. On the basis of current status, the discussion is concluded with some personal insights into the challenges and opportunities in future research directions.
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